China's semiconductor SiC single crystal powder and equipment production to achieve a new breakthrough
On June 5th, 100 sets of silicon carbide (SiC) single crystal growth equipment were operating at high speed in the production building of the Second Research Institute of China Electronics Technology Group Corporation (CEC II). The SiC single crystal was in this 100 units. The equipment "strives" to grow.
Li Bin, the director of the First Division of China Electronics and Information Technology Co., Ltd., said: “The 100 SiC single crystal growth equipment and powders are all independently developed and produced by us. We are very proud that we can produce it ourselves.â€
SiC single crystal is a third-generation semiconductor material. With its unique characteristics such as large bandgap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, SiC single crystals become high-temperature, high-frequency, high-power, and anti-irradiation. The ideal material for integrated light, short wave luminescence and optoelectronic integrated devices is the core material of the new generation of radar, satellite communications, high voltage power transmission, rail transit, electric vehicles, and communications base stations. It has important application value and broad application prospects.
Li Bin, the director of the First Division of China Electronics and Information Technology Co., Ltd., said: “High-purity SiC powder is the key raw material for the growth of SiC single crystals. The single-crystal growth furnace is the core equipment for the growth of SiC single crystals, in order to grow high-quality SiC singles. Crystal, under the conditions of high-purity SiC powder and single crystal growth furnace, also need to design, debug and optimize the production process."
According to reports, the single crystal growth furnace needs to meet the requirements of high temperature, high vacuum, and high cleanliness. At present, there are only two domestic companies that can produce single crystal growth furnaces, and China Electronics 2 is one of them. They broke through the warm-field design of large-diameter SiC growth and achieved high ultimate vacuum and low background leakage rate for the 150mm-diameter SiC single crystal growth furnace. The design and manufacture of the growth furnace and small batch production also broke through the high-purity SiC powder. Key technologies such as impurity control technology, particle size control technology, and crystal shape control technology have achieved mass production of SiC powders with a purity of 99.9995% or more. (Reporter Wang Yufang, Wang Haibin correspondent)
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