Suzhou Nano Institute made new progress in research on flexible printed carbon nanotube circuits

With the advent of various new high-performance inorganic and organic semiconductor materials and inorganic/organic semiconductor composite materials, as well as the development of new printing equipment, printing processes, and printed electronics related theories, various new types of inorganic and organic thin film transistor device devices have been developed. Continuously improving and flourishing toward full printing, large area, flexibility, integration, and low power consumption.

The semiconducting carbon nanotubes are not only small in size, but also have good electrical properties (eg, the mobility of the carbon nanotube transistor device can be downloaded at a room temperature of more than 1000 cm 2 V −1 s −1 , and the current density exceeds 109 Acm −2 ), and the optical and mechanical properties are excellent. The physical and chemical properties are stable, and the constructed electronic components have the advantages of less heat generation and higher operating frequency. At the same time, carbon nanotubes are easily inked and the post-treatment temperature is low. Therefore, carbon nanotubes are one of the most ideal semiconductor materials for the formation of printed flexible thin film transistors.

The Printed Electronics Center of the Suzhou Institute of Nanotechnology and Nanobionics of the Chinese Academy of Sciences has been devoted to the development of high performance printable semiconductor carbon nanotube inks, and the construction and application of high performance printed carbon nanotube thin film transistor devices and their circuits. More than 10 kinds of high-performance, printable semiconducting carbon nanotube inks have been successfully developed and selective separation of specific chiral semiconducting carbon nanotubes has been achieved (as shown in Figure 1a).

High-performance printed thin film transistor arrays, inverters, NOR gates, ring oscillators, and OLED drive circuits are built on large area flexible (PET) and rigid (glass and silicon, etc.) substrates. The switching ratio and mobility of printed thin-film transistors can reach 107 and 30cm2V-1s-1 or more (as shown in Fig. 1b, c). By improving the printing process, the uniformity of printed thin-film transistor devices is significantly improved (ACS Appl. Mater. Interfaces, 2014, 6(13), 9997-10004). The large-area flexible OLED driver circuit constructed can drive an external OLED under low voltage (2V) conditions, laying the foundation for the development of low-power, large-area flexible OLED display technology (as shown in Figures 2 and 3, Nanoscale, 2014, 6(3): 1589-1595).

In addition, printed flexible inverters, NOR gates, and ring oscillators also exhibit superior performance. The printed inverter can have a gain of 33 when Vdd is only 1.25V, and can reach 1.7kHz when Vdd is 2V (as shown in Figure 4, Nanoscale, 2014, DOI: 10.1039/C4NR05471G). At present, the Printed Electronics Center is working with related companies to develop printed carbon nanotube backplane display technology and more complex CMOS logic circuits.

The above work has received strong support from the National Natural Science Foundation of China, the Innovation Project Direction Project of the Chinese Academy of Sciences and the Jiangsu Provincial Natural Fund.

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