The microelectronics has obtained the graphene transistor physical model and its circuit application research.
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Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has made progress in the physical model of graphene transistors and their circuit applications.
Under the support of the Chinese Academy of Sciences, the National Natural Science Foundation of China, and the Ministry of Science and Technology, the Key Laboratory of Microelectronic Devices and Integration Technology of the Institute of Microelectronics has long devoted its research to the basic issues of molecular electronics, based on semiclassical Boltzmann transmission theory and Thermal excitation transfer theory, for the first time in the world, proposes a continuous physical model for graphene transistors. The model covers long-range and short-range scattering mechanisms, can accurately describe the temperature characteristics of the device, and maintain a high degree of agreement with the experimental data. The model can be embedded into commercial CAD software through VA programming to accurately describe the continuous AC and DC characteristics of the device, enabling circuit-level prediction and RF circuit design and prediction. Related research was included in IEDM., Washington, DC, December 7-9, 2015.
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